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Package Marking and Ordering Information
Part Number
FDA33N25
Top Mark
FDA33N25
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0 V, T J = 25 o C
250
-
-
V
Δ BV DSS
/ Δ T J
I DSS
I GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, Referenced to
V DS = 250 V, V GS = 0 V
V DS = 200 V, T C = 125 o C
V GS = ±30 V, V DS = 0 V
25 o C
-
-
-
-
0.34
-
-
-
-
1
10
±100
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 16.5 A
V DS = 20 V, I D = 16.5 A
3.0
-
-
-
0.088
24.2
5.0
0.094
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1 MHz
-
-
-
1655
315
35
2200
420
55
pF
pF
pF
Q g(tot)
Q gs
Q gd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 200 V, I D = 33 A,
V GS = 10 V
(Note 4)
-
-
-
36
10.8
16
46.8
-
-
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 125 V, I D = 33 A,
V GS = 10 V, R G = 25 Ω
(Note 4)
-
-
-
-
33
142
77
68
76
293
165
146
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
33
132
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 33 A
V GS = 0 V, I SD = 33 A,
dI F /dt = 100 A/ μ s
-
-
-
-
256
2.3
1.4
-
-
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1.35 mH, I AS = 33 A, V DD = 50 V, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 33 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical Characteristics
?2007 Fairchild Semiconductor Corporation
FDA33N25 Rev. C1
2
www.fairchildsemi.com
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